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Graphene field effect transistor chipGraphene field effect transistor chip

产品编号:3092685
产品类别:
品牌:Aldrich
优惠价:立即咨询
产品价格
产品编号包装单位单价(元)国内现货国外库存购物车
30926851EA9730
产品别名

Graphene field effect transistor chip

GFET Chip

基本信息
Application【应用】
· Chemical Sensors
· Biosensors
General description【一般说明】
Graphene:
· Graphene Growth Process: Atmospheric Pressure Chemical Vapor Deposition
· Graphene Growth substrate: Copper foil, 25 μ thick
· Transfer process: Wet electromechanical separation
· Graphene Thickness: Single Atomic Layer
· Sheet resistance on Si/SiO2: 900 ± 50 ohms/sq
· FET mobility on Al2O3: ~3000 cm2/V sec
· FET mobility on Si/SiO2: ~1500 cm2/V sec
· FET mobility using new experimental method with unwrinkled graphene on Si/SiO2: ~7000 cm2/V sec
· Material uniformity: >95 % Single layer graphene
· Transparency: >97.4 %
GFET device info:
· GFET Device Dirac Voltage Range 0-60 V
· GFET Chip: 10 devices per chip
· Yield: 90 %
产品性质
description【描述】
Material Description: graphene monolayer (RAMAN)
Sheet resistance on Si/SiO2: 900 ± 50 ohms/sq
安全信息
WGK德国【德国水污染分类】
3
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