Graphene field effect transistor chipGraphene field effect transistor chip

· Chemical Sensors
· Biosensors

Graphene:
· Graphene Growth Process: Atmospheric Pressure Chemical Vapor Deposition
· Graphene Growth substrate: Copper foil, 25 μ thick
· Transfer process: Wet electromechanical separation
· Graphene Thickness: Single Atomic Layer
· Sheet resistance on Si/SiO₂: 900 ± 50 ohms/sq
· FET mobility on Al₂O₃: ～3000 cm²/V sec
· FET mobility on Si/SiO₂: ～1500 cm²/V sec
· FET mobility using new experimental method with unwrinkled graphene on Si/SiO₂: ～7000 cm²/V sec
· Material uniformity: >95 % Single layer graphene
· Transparency: >97.4 %
GFET device info:
· GFET Device Dirac Voltage Range 0-60 V
· GFET Chip: 10 devices per chip
· Yield: 90 %

Material Description: graphene monolayer (RAMAN)
Sheet resistance on Si/SiO₂: 900 ± 50 ohms/sq

3